標題: Solid-state structure of the naphthalene-based n-type semiconductor, and performance improved with Mo-based source/drain electrodes
作者: Kao, Chia-Chun
Lin, Pang
Shen, Yu-Yuan
Yan, Jing-Yi
Ho, Jia-Chong
Lee, Cheng-Chung
Chan, Li-Hsin
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: organic thin-film transistors;n-type;naphthalene;air-stable;molybdenum
公開日期: 1-May-2008
摘要: The synthesis, single-crystal structures, and device performance of novel naphthalene-diimide are described. The crystal structure has revealed the importance of a withdrawing group on solid-state packing. Metal molybdenum use as source/drain (S/D) electrodes can improve the performance of the bottom-contact device. The bottom-contact device based on a material of N,N'-bis (4-trifluoromethoxybenzyl) naphthalene-1,4,5,8-tetracarboxylic acid diimide has a high mobility of 3.58 x 10(-2) cm(2) V-1 s(-1), a threshold voltage of 1.3 V, and an on/off current ratio of 5.2 x 10(5). (c) 2008 Published by Elsevier B.V.
URI: http://dx.doi.org/10.1016/j.synthmet.2008.01.019
http://hdl.handle.net/11536/9417
ISSN: 0379-6779
DOI: 10.1016/j.synthmet.2008.01.019
期刊: SYNTHETIC METALS
Volume: 158
Issue: 7
起始頁: 299
結束頁: 305
Appears in Collections:Articles


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