|標題:||Enhanced vertical extraction efficiency from a thin-film InGaN-GaN light-emitting diode using a 2-D photonic crystal and an omnidirectional reflector|
|作者:||Lin, C. H.|
Yen, H. H.
Lai, C. F.
Huang, H. W.
Chao, C. H.
Kuo, H. C.
Lu, T. C.
Wang, S. C.
Leung, K. M.
Department of Photonics
|關鍵字:||light-emitting diode (LED);onmidirectional reflector (ODR);photonic crystal (PC)|
|摘要:||An InGaN-GaN thin-film vertical-type light-emitting diode with a two-dimensional photonic crystal (PC) on the emitting surface and a TiO2-SiO2 onmidirectional reflector on the bottom was fabricated. The device was investigated by performing a series of experiments and numerical computations. Electroluminescence measurement revealed a strong extraction enhancement in the vertical direction at 433-nm wavelength. The emission spectrum of the light was found to be strongly modified by the PC to have a significantly narrow linewidth of 5 nm. Our experimental results were in accord with those obtained from our numerical findings.|
|期刊:||IEEE PHOTONICS TECHNOLOGY LETTERS|
|Appears in Collections:||Articles|
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