標題: High-quality nanothick single-crystal Y(2)O(3) films epitaxially grown on Si (111): Growth and structural characteristics
作者: Lee, Y. J.
Lee, W. C.
Nieh, C. W.
Yang, Z. K.
Kortan, A. R.
Hong, M.
Kwo, J.
Hsu, C. -H.
光電工程學系
Department of Photonics
公開日期: 1-May-2008
摘要: High-quality single-crystal nanothick Y(2)O(3) films have been grown epitaxially on Si (111) despite a lattice mismatch of 2.4%. The films were electron beam evaporated from pure compacted powder Y(2)O(3) target in ultrahigh vacuum. Y(2)O(3) 3 nm thick exhibited a bright, sharp, streaky reconstructed (4x4) reflection high energy electron diffraction pattern. Structural studies carried out by x-ray diffraction with synchrotron radiation and high-resolution transmission electron microscopy show that the films have the cubic bixbyite phase with a remarkably uniform thickness and high structural perfection. Two Y(2)O(3) domains of B-type Y(2)O(3) [2 (1) over bar(1) over bar]parallel to Si[11 (2) over bar] and A-type Y(2)O(3) [2 (1) over bar(1) over bar]parallel to Si[2 (1) over bar(1) over bar] coexist in the initial film growth with B type predominating over A type in thicker films as studied using x-ray diffraction. The narrow full width at half maximum of 0.014 degrees in the omega-rocking curve is the characteristic of excellent crystalline films. High-resolution transmission electron microscopy and fast Fourier transform analysis show atomically sharp interface and strain relaxation in thicker films. (C) 2008 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.2889387
http://hdl.handle.net/11536/9400
ISSN: 1071-1023
DOI: 10.1116/1.2889387
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 26
Issue: 3
起始頁: 1124
結束頁: 1127
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