標題: Growth and structural characteristics of GaN/AlN/nanothick gamma-Al(2)O(3)/Si (111)
作者: Lee, W. C.
Lee, Y. J.
Tung, L. T.
Wu, S. Y.
Lee, C. H.
Hong, M.
Ng, H. M.
Kwo, J.
Hsu, C. H.
光電工程學系
Department of Photonics
公開日期: 1-May-2008
摘要: The authors report on the growth of GaN by nitrogen plasma-assisted molecular beam epitaxy (MBE) on a 2 in. Si (111) substrates with a nanothick (similar to 4.8 nm thick) gamma-Al(2)O(3) as a template/buffer. A thin layer of MBE-AlN similar to 40 nm thick was inserted prior to the growth of GaN. High-resolution transmission electron microscopy (HR-TEM) and high-resolution x-ray diffraction studies indicated that both of the nanothick gamma-Al(2)O(3) and AlN are a single crystal. Reflection high-energy electron diffraction, high-resolution x-ray scattering using synchrotron radiation, and cross-sectional HR-TEM measurements indicated an orientation relationship of GaN(0002)parallel to AlN(0002)parallel to gamma-Al(2)O(3)(111)parallel to Si(111) and GaN[10-10]parallel to AlN[10-10]parallel to gamma-Al(2)O(3)[2-1-1]parallel to Si[2-1-1]. A dislocation density of 5x(10(8)-10(9))/cm(2) in the GaN similar to 0.5 mu m thick was determined using cross-sectional TEM images under weak-beam dark-field conditions. (C) 2008 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.2905241
http://hdl.handle.net/11536/9399
ISSN: 1071-1023
DOI: 10.1116/1.2905241
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 26
Issue: 3
起始頁: 1064
結束頁: 1067
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