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dc.contributor.authorChiu, Ching-Huaen_US
dc.contributor.authorLo, Ming-Huaen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorHuang, H. W.en_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:12:14Z-
dc.date.available2014-12-08T15:12:14Z-
dc.date.issued2008-05-01en_US
dc.identifier.issn0733-8724en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JLT.2008.922157en_US
dc.identifier.urihttp://hdl.handle.net/11536/9397-
dc.description.abstractWe have developed a simple method to fabricate nanoscale masks by using self-assembly Ni clusters formed through a rapid thermal annealing (RTA) process. The density and dimensions of the Ni nano-masks could be precisely controlled. The nano-masks were successfully applied to GaN-based light-emitting diodes (LEDs) with nano-roughened surface, GaN nanorods, and GaN-based nanorod LEDs to enhance light output power or change structure properties. The GaN-based LED with nano-roughened surface by Ni nano-masks and excimer laser etching has increased 55% light output at 20 mA when compared to that without the nano-roughened process. The GaN nanorods fabricated by the Ni nano-masks and ICP-RIE dry etching showed 3.5 times over the as-grown sample in photoluminescence (PL) intensity. The GaN-based nanorod LEDs assisted by photo-enhanced chemical (PEC) wet oxidation process were also demonstrated. The electroluminescence (EL) intensity of the GaN-based nanorod LED with PEC was about 1.76 times that of the as-grown LED. The fabrication, structure properties, physical features, and the optical and electrical properties of the fabricated devices will be discussed.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectlight-emitting diodes (LEDs)en_US
dc.subjectnano-masksen_US
dc.subjectnanorodsen_US
dc.titleNano-processing techniques applied in GaN-Based light-emitting devices with self-assembly Ni nano-masksen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JLT.2008.922157en_US
dc.identifier.journalJOURNAL OF LIGHTWAVE TECHNOLOGYen_US
dc.citation.volume26en_US
dc.citation.issue9-12en_US
dc.citation.spage1445en_US
dc.citation.epage1454en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000256971400050-
dc.citation.woscount11-
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