|標題:||Characteristics of InGaAs submonolayer quantum-dot and InAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers|
|作者:||Yang, Hung-Pin D.|
Hsu, I. -Chen
Maleev, Nikolai A.
Blokhin, Sergej A.
Chi, Jim Y.
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
|關鍵字:||photonic-crystal (PhC);quantum-dot (QD);submonolayer (SML);vertical-cavity surface-emitting laser (VCSEL)|
|摘要:||We have made InGaAs submonolayer (SML) quantum-dot (QD) and InAs QD photonic-crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic communications in the 990 and 1300 nm ranges, respectively. The active region of the InGaAs SML QD PhC-VCSEL contains three InGaAs SML QD layers, with each of the SML QD layer formed by alternating depositions of InAs (< 1 ML) and GaAs. The active region of the InAs QD PhC-VCSEL contains 17 undoped InAs-InGaAs QD layers. Both types of QD PhC-VCSELs exhibit single-mode characteristics throughout the current range, with side-mode suppression ratio (SMSR) larger than 35 dB. A maximum output power of 5.7 mW has been achieved for the InGaAs SML QD PhC-VCSEL. The near-field image study of the QD PhC-VCSELs indicates that the laser beam is well confined by the photonic-crystal structure of the device.|
|期刊:||JOURNAL OF LIGHTWAVE TECHNOLOGY|
|Appears in Collections:||Articles|