標題: Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the schottky contacts on AlGaN/GaN heterostructures
作者: Lu, Chung-Yu
Chang, Edward Yi
Huang, Jui-Chien
Chang, Chia-Ta
Lin, Mei-Hsuan
Lee, Ching-Tung
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: AlGaN/GaN heterostructures;tungsten nitride;Schottky contacts
公開日期: 1-May-2008
摘要: Tungsten, stoichiometric W2N, and nitrogen-rich W2N films were used as Schottky contacts on AlGaN/GaN heterostructures. The nitrogen content in the film was controlled by varying the nitrogen-to-argon gas flow ratio during the reactive sputter deposition. The diode with the nitrogen-rich film exhibited a higher Schottky barrier height and the leakage current was comparable to that of the Ni/Au Schottky contact. Analysis suggested that this was due to the increase of the tungsten nitride work function as the result of higher nitrogen incorporation. Furthermore, after 600 degrees C thermal annealing, the diode was stable and showed no change in the leakage current.
URI: http://dx.doi.org/10.1007/s11664-008-0384-9
http://hdl.handle.net/11536/9386
ISSN: 0361-5235
DOI: 10.1007/s11664-008-0384-9
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 37
Issue: 5
起始頁: 624
結束頁: 627
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