Full metadata record
DC FieldValueLanguage
dc.contributor.authorWu, Chi-Changen_US
dc.contributor.authorWu, Wen-Faen_US
dc.contributor.authorKo, Fu-Hsiangen_US
dc.contributor.authorYou, Hsin-Chiangen_US
dc.contributor.authorYang, Wen-Luhen_US
dc.date.accessioned2014-12-08T15:12:11Z-
dc.date.available2014-12-08T15:12:11Z-
dc.date.issued2008-05-05en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2920202en_US
dc.identifier.urihttp://hdl.handle.net/11536/9344-
dc.description.abstractThe thermal and morphological stability of NiSi is enhanced by inserting a polycrystalline (poly-Si) buffer layer between the Ni and poly-SiGe films. NiSi films formed on poly-Si/poly-SiGe stack layers possessed continuous, smooth structures after annealing at 500-850 degrees C. Moreover, nickel germanosilicide [Ni(Si, Ge)] lines formed on the poly-SiGe exhibited a fine-line effect, i.e., the sheet resistance increased upon decreasing the linewidth, whereas the sheet resistance of NiSi lines formed on the poly-Si/poly-SiGe stack layers remained less than 5 Omega/square. A model for the stress-confined grain growth and recrystallization is proposed to explain the improved properties of the poly-Si-buffered film. (c) 2008 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleStress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayeren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2920202en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume92en_US
dc.citation.issue18en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department材料科學與工程學系奈米科技碩博班zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentGraduate Program of Nanotechnology , Department of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000256485700030-
dc.citation.woscount0-
Appears in Collections:Articles


Files in This Item:

  1. 000256485700030.pdf