標題: High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer
作者: Ling, H. S.
Wang, S. Y.
Lee, C. P.
Lo, M. C.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 12-五月-2008
摘要: We demonstrate the high quantum efficiency InAs/In(0.15)Ga(0.85)As dots-in-a-well (DWELL) quantum dot infrared photodetectors (QDIPs). A thin Al(0.3)Ga(0.7)As layer was inserted on top of the InAs quantum dots (QDs) to enhance the confinement of QD states in the DWELL structure. The better confinement of the electronic states increases the oscillation strength of the infrared absorption. The higher excited state energy also improves the escape probability of the photoelectrons. Compared with the conventional DWELL QDIPs, the quantum efficiency increases more than 20 times and the detectivity is about an order of magnitude higher at 77 K. (c) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2926663
http://hdl.handle.net/11536/9336
ISSN: 0003-6951
DOI: 10.1063/1.2926663
期刊: APPLIED PHYSICS LETTERS
Volume: 92
Issue: 19
結束頁: 
顯示於類別:期刊論文


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