標題: Influence of As on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots
作者: Tseng, Chi-Che
Mai, Shu-Cheng
Lin, Wei-Hsun
Wu, Shung-Yi
Yu, Bang-Ying
Chen, Shu-Han
Lin, Shih-Yen
Shyue, Jing-Jong
Wu, Meng-Chyi
光電工程學系
Department of Photonics
關鍵字: GaSb quantum dots;light-emitting diode
公開日期: 1-Mar-2011
摘要: The influence of As atoms on the morphologies of GaSb quantum dots (QDs) is investigated. Without any special treatment, GaSb quantum rings (QRs) are observed in the embedded GaSb layer even when the uncapped layer reveals QD-like morphologies. With intentional As supply after the uncapped GaSb QD deposition, a QD to QR transition is observed. The phenomenon suggests that insufficient Sb atoms on the GaSb QDs would lead to the QD to QR transition as in the case of embedded GaSb layers. With extended Sb soaking time following GaSb deposition, QD structures could be well maintained for the embedded GaSb layers. A light-emitting diode operated at room temperature is fabricated based on the GaSb/GaAs QD structure. Identical peak positions in photoluminescence and electroluminescence (EL) spectra of the device show that type-II GaSb QDs are responsible for the observed EL.
URI: http://dx.doi.org/10.1109/JQE.2010.2089041
http://hdl.handle.net/11536/9252
ISSN: 0018-9197
DOI: 10.1109/JQE.2010.2089041
期刊: IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume: 47
Issue: 3
起始頁: 335
結束頁: 339
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