標題: Arsenic-Implanted HfON Charge-Trapping Flash Memory With Large Memory Window and Good Retention
作者: Tsai, C. Y.
Lee, T. H.
Chin, Albert
電機工程學系
Department of Electrical and Computer Engineering
關鍵字: Charge-trapping Flash (CTF);HfON;ion implant;nonvolatile memory (NVM)
公開日期: 1-Mar-2011
摘要: We have fabricated the TaN-[SiO(2)-LaAlO(3)]-HfON-[LaAlO(3)-SiO(2)]-Si charge-trapping Flash device. A large 6.4-V initial memory window, a 4.3-V 10-year extrapolated retention window at 125 degrees C, and a 5.5-V endurance window at 10(6) cycles were measured under very fast 100-mu s and low +/- 16-V program/erase. These excellent results were achieved using an As(+) implant into the HfON trapping layer, which were significantly better than those of the control device without ion implantation.
URI: http://dx.doi.org/10.1109/LED.2010.2100019
http://hdl.handle.net/11536/9240
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2100019
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 3
起始頁: 381
結束頁: 383
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