Title: High-Performance Poly-Si Nanowire Thin-Film Transistors Using the HfO(2) Gate Dielectric
Authors: Lee, Chen-Ming
Tsui, Bing-Yue
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Mar-2011
Abstract: High-performance polycrystalline-silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) using hafnium dioxide (HfO(2)) as gate dielectric is successfully fabricated for the first time. The excellent short-channel characteristics are attributed to the high-kappa gate dielectric, ultrathin poly-SiNW channel thickness, and omega-shaped gate structure. The record high driving capability of 549 mu A/mu m results from the ultrashort gate length (L(G)), thin equivalent oxide thickness, and Ni silicide metal source/drain. This letter reveals the opportunity of high-performance poly-Si TFT circuits for system-on-panel and 3-D integrated circuit (3-D IC) applications.
URI: http://dx.doi.org/10.1109/LED.2010.2095493
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2095493
Volume: 32
Issue: 3
Begin Page: 327
End Page: 329
Appears in Collections:Articles