標題: An Investigation of Diffusion Barrier Characteristics of an Electroless Co(W, P) Layer to Lead-Free SnBi Solder
作者: Pan, Hung-Chun
Hsieh, Tsung-Eong
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Diffusion barrier;electroless Co(W,P);lead-free SnBi solder;intermetallic compounds
公開日期: 1-Mar-2011
摘要: Diffusion barrier characteristics for eutectic SnBi solder/electroless Co(W,P) couples were investigated via liquid-state aging at 250 degrees C and solid-state aging at 120 degrees C. At the couple interface, CoSn(3) intermetallic compound (IMC) spallation was observed for the SnBi/amorphous Co(W,P) couple subjected to liquid-state aging. In contrast, no spallation of IMCs was observed for the SnBi/amorphous Co(W,P) couples subjected to solid-state aging. For the SnBi/polycrystalline Co(W,P) couple, a thick IMC layer was observed adjacent to a tungsten-enriched amorphous interfacial layer regardless of aging conditions. IMC formation in all samples indicated that Co(W,P) is essentially a sacrificial barrier to SnBi solder. However, amorphous Co(W,P) might also exhibit stuffed-type barrier behavior due to its relatively high phosphorus (P) content. Analytical results indicated that the P content in Co(W,P) is a crucial factor affecting the structural evolution at the SnBi/electroless Co(W,P) interface.
URI: http://dx.doi.org/10.1007/s11664-010-1488-6
http://hdl.handle.net/11536/9236
ISSN: 0361-5235
DOI: 10.1007/s11664-010-1488-6
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 40
Issue: 3
起始頁: 330
結束頁: 339
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