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dc.contributor.author王興宗en_US
dc.contributor.authorWANG SHING CHUNGen_US
dc.date.accessioned2014-12-13T10:33:53Z-
dc.date.available2014-12-13T10:33:53Z-
dc.date.issued2003en_US
dc.identifier.govdocNSC92-2215-E009-015zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/92346-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=844033&docId=159937en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.title氮化鎵材料製程開發及元件製作(III)zh_TW
dc.titleGaN-Based Fabrication Process Development and Device Fabrication (III)en_US
dc.typePlanen_US
dc.contributor.department國立交通大學光電工程研究所zh_TW
Appears in Collections:Research Plans


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