標題: Study of the Formation Mechanism of Cu/Ge/Pd Ohmic Contact to n-Type InGaAs
作者: Lin, Y. C.
Shie, Sheng-Li
Shie, Tin-En
Wong, Yuen-Yee
Chen, K. S.
Chang, E. Y.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Copper metalization;Cu/Ge/Pd Ohmic contact;InGaAs
公開日期: 1-三月-2011
摘要: This study investigates electrical characteristics and the formation mechanism of the Cu/Ge/Pd Ohmic contact to n-type InGaAs. After annealing the contact at 250 degrees C for 20 min, Cu(3)Ge and Pd(12)Ga(5)As(2) compounds formed and Ge diffused into the InGaAs layer, achieving a heavily doped InGaAs layer with a low contact resistivity of 1 x 10(-6) Omega cm(2). Thermal stability tests were performed on the Cu/Ge/Pd Ohmic contact to InGaAs after Ohmic contact formation, showing no obvious degradation after a 72 h reliability test at 250 degrees C. The results indicate excellent electrical characteristics and thermal stability using Cu/Ge/Pd as an Ohmic contact metal to an n-InGaAs layer.
URI: http://dx.doi.org/10.1007/s11664-010-1410-2
http://hdl.handle.net/11536/9233
ISSN: 0361-5235
DOI: 10.1007/s11664-010-1410-2
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 40
Issue: 3
起始頁: 289
結束頁: 294
顯示於類別:期刊論文


文件中的檔案:

  1. 000287863200007.pdf