Title: Study of the Formation Mechanism of Cu/Ge/Pd Ohmic Contact to n-Type InGaAs
Authors: Lin, Y. C.
Shie, Sheng-Li
Shie, Tin-En
Wong, Yuen-Yee
Chen, K. S.
Chang, E. Y.
Department of Materials Science and Engineering
Keywords: Copper metalization;Cu/Ge/Pd Ohmic contact;InGaAs
Issue Date: 1-Mar-2011
Abstract: This study investigates electrical characteristics and the formation mechanism of the Cu/Ge/Pd Ohmic contact to n-type InGaAs. After annealing the contact at 250 degrees C for 20 min, Cu(3)Ge and Pd(12)Ga(5)As(2) compounds formed and Ge diffused into the InGaAs layer, achieving a heavily doped InGaAs layer with a low contact resistivity of 1 x 10(-6) Omega cm(2). Thermal stability tests were performed on the Cu/Ge/Pd Ohmic contact to InGaAs after Ohmic contact formation, showing no obvious degradation after a 72 h reliability test at 250 degrees C. The results indicate excellent electrical characteristics and thermal stability using Cu/Ge/Pd as an Ohmic contact metal to an n-InGaAs layer.
URI: http://dx.doi.org/10.1007/s11664-010-1410-2
ISSN: 0361-5235
DOI: 10.1007/s11664-010-1410-2
Volume: 40
Issue: 3
Begin Page: 289
End Page: 294
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