Title: Capacitance Characteristics Improvement and Power Enhancement for RF LDMOS Transistors Using Annular Layout Structure
Authors: Chiu, Chia-Sung
Chen, Kun-Ming
Huang, Guo-Wei
Chen, Ming-I.
Yang, Yu-Chi
Wang, Kai-Li
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Annular structure;lateral-diffused;metal-oxide-semiconductor (LDMOS) transistor;power;power-added efficiency (PAE);X-parameters
Issue Date: 1-Mar-2011
Abstract: This paper presents an annular-structure lateral-diffused metal-oxide-semiconductor (LDMOS) RF transistor using a 0.5-mu m LDMOS process. This paper also examines the dc, small-signal, and large-signal characteristics of RF LDMOS transistors with different closed structures. In particular, the problem of evaluating the LDMOS aspect ratio for annular structure is addressed. The capacitance characteristics improvement in the LDMOS device design using the annular structure was also investigated. The power gain and efficiency of annular structure give nearly 5% enhancement compared to the traditional structure with 80-mu m gatewidth at 1.9 GHz. Results show that the annular structure appears to be a better layout design for RF LDMOS transistors.
URI: http://dx.doi.org/10.1109/TMTT.2010.2103215
http://hdl.handle.net/11536/9207
ISSN: 0018-9480
DOI: 10.1109/TMTT.2010.2103215
Journal: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume: 59
Issue: 3
Begin Page: 638
End Page: 643
Appears in Collections:Articles


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