標題: Improved Retention Characteristic in Polycrystalline Silicon-Oxide-Hafnium Oxide-Oxide-Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride
作者: Hsieh, Chih Ren
Lai, Chiung Hui
Lin, Bo Chun
Zheng, Yuan Kai
Lou, Jen Chung
Lin, Gray
電機工程學系
Department of Electrical and Computer Engineering
公開日期: 1-Mar-2011
摘要: In this paper, we present a simple novel process for forming a robust and reliable oxynitride dielectric with a high nitrogen content. It is highly suitable for n-channel metal-oxide-semiconductor field-effect transistor (nMOSFETs) and polycrystalline silicon-oxide-hafnium oxide-oxide-silicon (SOHOS)-type memory applications. The proposed approach is realized by using chemical oxide with ammonia (NH(3)) nitridation followed by reoxidation with oxygen (O(2)). The novel oxynitride process is not only compatible with the standard complementary metal-oxide-semiconductor (CMOS) process, but also can ensure the improvement of flash memory with low-cost manufacturing. The characteristics of nMOSFETs and SOHOS-type nonvolatile memories (NVMs) with a robust oxynitride as a gate oxide or tunnel oxide are studied to demonstrate their advantages such as the retardation of the stress-induced trap generation during constant-voltage stress (CVS), the program/erase behaviors, cycling endurance, and data retention. The results indicate that the proposed robust oxynitride is suitable for future nonvolatile flash memory technology application. (C) 2011 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.50.036503
http://hdl.handle.net/11536/9192
ISSN: 0021-4922
DOI: 10.1143/JJAP.50.036503
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 50
Issue: 3
結束頁: 
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