標題: Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET
作者: Hu, Vita Pi-Ho
Wu, Yu-Sheng
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Electrostatic integrity;germanium;germanium-on-nothing(GeON);Poisson's equation;silicon-on-nothing (SON);ultrathin body (UTB)
公開日期: 1-Mar-2011
摘要: This paper examines the electrostatic integrity of ultrathin-body (UTB) germanium-on-nothing (GeON) MOSFET using theoretically calculated subthreshold swing from the analytical solution of Poisson's equation. Our results indicate that UTB GeON MOSFETs with the ratio of channel length (L(g)) to channel thickness (T(ch)) around 4 can show comparable subthreshold swing to that of the silicon-on-nothing counterparts. The impact of buried insulator (BI) thickness (T(BI)) and BI permittivity on the electrostatic integrity of the UTB germanium channel devices are also examined.
URI: http://dx.doi.org/10.1109/TNANO.2010.2041010
http://hdl.handle.net/11536/9162
ISSN: 1536-125X
DOI: 10.1109/TNANO.2010.2041010
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 10
Issue: 2
起始頁: 325
結束頁: 330
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