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dc.contributor.authorFu, Yi-Kengen_US
dc.contributor.authorJiang, Ren-Haoen_US
dc.contributor.authorLu, Yu-Hsuanen_US
dc.contributor.authorChen, Bo-Chunen_US
dc.contributor.authorXuan, Rongen_US
dc.contributor.authorFang, Yen-Hsiangen_US
dc.contributor.authorLin, Chia-Fengen_US
dc.contributor.authorSu, Yan-Kuinen_US
dc.contributor.authorChen, Jenn-Fangen_US
dc.date.accessioned2014-12-08T15:11:54Z-
dc.date.available2014-12-08T15:11:54Z-
dc.date.issued2011-03-21en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3571440en_US
dc.identifier.urihttp://hdl.handle.net/11536/9130-
dc.description.abstractThe letter reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barrier (QB). The indium mole fraction of AlInGaN QB could be enhanced as we increased the trimethylgallium flow rate. It was found the AlInGaN/InGaN LEDs can reduce forward voltage and improve light output power, compared with conventional GaN QB. By using advanced device simulation, it should be attributed to a reduction in lattice mismatch induced polarization mismatch in the active layer, which results in the suppression of electron overflow. (C) 2011 American Institute of Physics. [doi:10.1063/1.3571440]en_US
dc.language.isoen_USen_US
dc.titleThe effect of trimethylgallium flows in the AIInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxyen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3571440en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume98en_US
dc.citation.issue12en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000288808200015-
dc.citation.woscount14-
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