標題: The effect of trimethylgallium flows in the AIInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
作者: Fu, Yi-Keng
Jiang, Ren-Hao
Lu, Yu-Hsuan
Chen, Bo-Chun
Xuan, Rong
Fang, Yen-Hsiang
Lin, Chia-Feng
Su, Yan-Kuin
Chen, Jenn-Fang
電子物理學系
Department of Electrophysics
公開日期: 21-Mar-2011
摘要: The letter reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barrier (QB). The indium mole fraction of AlInGaN QB could be enhanced as we increased the trimethylgallium flow rate. It was found the AlInGaN/InGaN LEDs can reduce forward voltage and improve light output power, compared with conventional GaN QB. By using advanced device simulation, it should be attributed to a reduction in lattice mismatch induced polarization mismatch in the active layer, which results in the suppression of electron overflow. (C) 2011 American Institute of Physics. [doi:10.1063/1.3571440]
URI: http://dx.doi.org/10.1063/1.3571440
http://hdl.handle.net/11536/9130
ISSN: 0003-6951
DOI: 10.1063/1.3571440
期刊: APPLIED PHYSICS LETTERS
Volume: 98
Issue: 12
結束頁: 
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