Title: Effect of Si doping and applied pressure upon magnetostructural properties of Tb(5)(Si(x)Ge(1-x))(4) magnetocaloric compounds
Authors: Tseng, Yuan-Chieh
Ma, Hao-Jhong
Yang, Chao-Yao
Mudryk, Yaroslav
Pecharsky, Vitalij K.
Gschneidner, Karl A., Jr.
Souza-Neto, Narcizo M.
Haskel, Daniel
Department of Materials Science and Engineering
Issue Date: 28-Mar-2011
Abstract: The composition-and pressure-dependent magnetostructural properties of Tb(5)(Si(x)Ge(1-x))(4) (x = 0.4, 0.485, 0.625, and 0.7) were investigated using x-ray powder diffraction and x-ray magnetic circular dichroism in a diamond anvil cell, respectively. Substituting the smaller-size Si for Ge stabilizes a single-phase, ferromagnetic (FM) orthorhombic O(I) structure for x >= 0.7. Similarly, application of external pressure causes a canted antiferromagnetic orthorhombic O(II) sample (x=0.4) to transform into an FMO(I) phase at 4 GPa. The element- and orbital-specific x-ray absorption data indicate that the Tb 4f orbital occupation changes with external pressure, likely through 4f-5d electronic mixing, yet no changes in Tb 4f electronic structure are observed with Si doping. The results point to different mechanisms behind the enhancement of FM exchange interactions in Tb(5)(Si(x)Ge(1-x))(4) with chemical and applied pressure, respectively.
URI: http://dx.doi.org/10.1103/PhysRevB.83.104419
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.83.104419
Volume: 83
Issue: 10
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