標題: Influence of hydrogen plasma treatment on charge storage characteristics in high density tungsten nanocrystal nonvolatile memory
作者: Chen, Shih-Cheng
Chang, Ting-Chang
Chen, Wei-Ren
Lo, Yuan-Chun
Wu, Kai-Ting
Sze, S. M.
Chen, Jason
Liao, I. H.
Yeh (Huang), Fon-Shan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Hydrogen plasma;Tungsten nanoclystals;Nonvolatile memory;X-ray photoelectron spectroscopy
公開日期: 31-Mar-2011
摘要: This study focuses on the influence of a hydrogen plasma treatment on electrical properties of tungsten nanocrystal nonvolatile memory. The X-ray photon emission spectra show that, after the hydrogen plasma treatment, a change in binding energy occurs such that Si(x+) and Si(y+) peaks appear at a position that is shifted about 2.3 and 3.3 eV from Si(o+) in Si 2p spectra. This indicates that Si dangling bonds are passivated to form a Si-H bond structure in the SiO(2). Furthermore, the transmission electron microscopy shows cross-sectional and plane-view for the nanocrystal microstructure after the hydrogen plasma treatment. Electrical measurement analyses show improved data retention because the hydrogen plasma treatment enhances the quality of the oxide surrounding the nanocrystals. The endurance and retention properties of the memory device are improved by about 36% and 30%, respectively. (C) 2011 Elsevier By. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2011.01.259
http://hdl.handle.net/11536/9118
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.01.259
期刊: THIN SOLID FILMS
Volume: 519
Issue: 11
起始頁: 3897
結束頁: 3901
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