標題: Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier
作者: Chai, CY
Huang, JA
Lai, YL
Wu, JW
Chang, CY
Chan, YJ
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Au/Mo/Ti/Ge/Pd metallization;n-type GaAs;ohmic contact
公開日期: 1-十二月-1996
摘要: The influences of the As-outdiffusion and Au-indiffusion on the performances of the Au/Ge/Pd/n-GaAs ohmic metallization systems are clarified by investigating three different types of barrier metal structures Au/Ge/Pd/GaAs, Au/Ti/Ge/Pd/GaAs, and Au/Mo/Ti/Ge/Pd/GaAs. The results indicate? that As-outdiffusion leads to higher specific contact resistivity, whereas Au-indiffusion contributes to the turnaround of the contact resistivity at even higher annealing temperature. For Au/Mo/Ti/Ge/Pd/n-GaAs samples, they exhibit the smoothest surface and the lowest specific contact resistivity with the wildest available annealing temperature,range, Moreover, Auger electron spectroscopy depth profiles show that the existing Ti oxide for the Mo/Ti bilayer can very effectively retard Au-indiffusion, reflecting the onset of the turnaround point at much higher annealing temperature.
URI: http://hdl.handle.net/11536/910
ISSN: 0361-5235
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 25
Issue: 12
起始頁: 1818
結束頁: 1822
顯示於類別:期刊論文


文件中的檔案:

  1. A1996VX87900003.pdf