標題: A 1-V, 16.9 ppm/degrees C, 250 nA Switched-Capacitor CMOS Voltage Reference
作者: Hsieh, Chun-Yu
Huang, Hong-Wei
Chen, Ke-Horng
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: CMOS voltage reference;nanocurrent;switched-capacitor
公開日期: 1-Apr-2011
摘要: An ultra low-power, precise voltage reference using a switched-capacitor technique in 0.35-mu m CMOS is presented in this paper. The temperature dependence of the carrier mobility and channel length modulation effect can be effectively minimized by using 3.3 and 5V N-type transistors to operate in the saturation and subthreshold regions, respectively. In place of resistors, a precise reference voltage with flexible trimming capability is achieved by using capacitors. When the supply voltage is 1 V and the temperature is 80 degrees C, the supply current is 250 nA. The line sensitivity is 0.76%/V; the PSRR is -41 dB at 100 Hz and -17 dB at 10 MHz. Moreover, the occupied die area is 0.049 mm(2).
URI: http://dx.doi.org/10.1109/TVLSI.2009.2038061
http://hdl.handle.net/11536/9089
ISSN: 1063-8210
DOI: 10.1109/TVLSI.2009.2038061
期刊: IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
Volume: 19
Issue: 4
起始頁: 659
結束頁: 667
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