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dc.contributor.authorYang, C. C.en_US
dc.contributor.authorSheu, J. K.en_US
dc.contributor.authorKuo, C. H.en_US
dc.contributor.authorHuang, M. S.en_US
dc.contributor.authorTu, S. J.en_US
dc.contributor.authorHuang, F. W.en_US
dc.contributor.authorLee, M. L.en_US
dc.contributor.authorYeh, Yu-Hsiangen_US
dc.contributor.authorLiang, X. W.en_US
dc.contributor.authorLai, W. C.en_US
dc.date.accessioned2014-12-08T15:11:50Z-
dc.date.available2014-12-08T15:11:50Z-
dc.date.issued2011-04-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2011.2107725en_US
dc.identifier.urihttp://hdl.handle.net/11536/9076-
dc.description.abstractThe InGaN/sapphire-based photovoltaic (PV) cells with Al(0.14)Ga(0.86)N/In(0.21)Ga(0.79)N superlattice structures that serve as absorption layers were grown on patterned sapphire substrates (PSSs). Under global air-mass 1.5 conditions, the short-circuit current density, the open-circuit voltage, and the fill factor obtained from the PV cells were 1.21 mA/cm(2), 2.18 V, and 0.65, respectively, corresponding to a conversion efficiency of 1.71%. Compared with PV devices grown on flat sapphire substrates, the photocurrent of PSS-grown PV devices was enhanced by 26%. The improved PV performance was attributable to the positive effects of the PSS on the material quality.en_US
dc.language.isoen_USen_US
dc.subjectInGaNen_US
dc.subjectpatterned sapphire substrate (PSS)en_US
dc.subjectphotovoltaic (PV)en_US
dc.titleImproved Power Conversion Efficiency of InGaN Photovoltaic Devices Grown on Patterned Sapphire Substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2011.2107725en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume32en_US
dc.citation.issue4en_US
dc.citation.spage536en_US
dc.citation.epage538en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000288664800036-
dc.citation.woscount2-
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