|Title:||Improved Power Conversion Efficiency of InGaN Photovoltaic Devices Grown on Patterned Sapphire Substrates|
|Authors:||Yang, C. C.|
Sheu, J. K.
Kuo, C. H.
Huang, M. S.
Tu, S. J.
Huang, F. W.
Lee, M. L.
Liang, X. W.
Lai, W. C.
Institute of Lighting and Energy Photonics
|Keywords:||InGaN;patterned sapphire substrate (PSS);photovoltaic (PV)|
|Abstract:||The InGaN/sapphire-based photovoltaic (PV) cells with Al(0.14)Ga(0.86)N/In(0.21)Ga(0.79)N superlattice structures that serve as absorption layers were grown on patterned sapphire substrates (PSSs). Under global air-mass 1.5 conditions, the short-circuit current density, the open-circuit voltage, and the fill factor obtained from the PV cells were 1.21 mA/cm(2), 2.18 V, and 0.65, respectively, corresponding to a conversion efficiency of 1.71%. Compared with PV devices grown on flat sapphire substrates, the photocurrent of PSS-grown PV devices was enhanced by 26%. The improved PV performance was attributable to the positive effects of the PSS on the material quality.|
|Journal:||IEEE ELECTRON DEVICE LETTERS|
|Appears in Collections:||Articles|
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