標題: Channel Film Thickness Effect of Low-Temperature Polycrystalline-Silicon Thin-Film Transistors
作者: Ma, William Cheng-Yu
Chiang, Tsung-Yu
Yeh, Chi-Ruei
Chao, Tien-Sheng
Lei, Tan-Fu
電機工程學系
Department of Electrical and Computer Engineering
關鍵字: Channel film thickness;low-temperature polycrystalline-Si thin-film transistors (LTPS-TFTs);scaling down
公開日期: 1-Apr-2011
摘要: In this paper, the channel-film-thickness effect of low-temperature polycrystalline-Si thin-film transistors (LTPS-TFTs) is investigated. Greater channel film thickness can provide a higher field-effect mobility mu FE, rising from 14.33 to 22.33 cm(2)/V . s, as the channel film thickness increases from 55 to 120 nm, due to grain-size effect. In addition, varying the channel film thickness of LTPS-TFTs results in different junction leakage current due to the source/drain (S/D) junction area effect. Moreover, the S/D series resistance also significantly increases when the channel film thickness is reduced from 120 to 35 nm, leading to poor field-effect mobility mu FE and driving current. Consequently, the optimum channel film thickness for active-matrix liquid-crystal displays may be identified.
URI: http://dx.doi.org/10.1109/TED.2011.2104362
http://hdl.handle.net/11536/9065
ISSN: 0018-9383
DOI: 10.1109/TED.2011.2104362
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 58
Issue: 4
起始頁: 1268
結束頁: 1272
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