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dc.contributor.authorChen, Ming-Jeren_US
dc.contributor.authorChang, Sou-Chien_US
dc.contributor.authorKuang, Shin-Jiunen_US
dc.contributor.authorLee, Chien-Chihen_US
dc.contributor.authorLee, Wei-Hanen_US
dc.contributor.authorCheng, Kuan-Haoen_US
dc.contributor.authorZhan, Yi-Hsienen_US
dc.date.accessioned2014-12-08T15:11:49Z-
dc.date.available2014-12-08T15:11:49Z-
dc.date.issued2011-04-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2011.2107519en_US
dc.identifier.urihttp://hdl.handle.net/11536/9061-
dc.description.abstractAdditional electron mobility due to remote scatterers in n(+)-polysilicon 1.65-nm gate oxide (SiO(2)) n-channel metal-oxide-semiconductor field-effect transistors is experimentally extracted at three different temperatures (i.e., 233, 263, and 298 K). The core of the extraction process consists of simulated temperature-dependent universal mobility curves and Matthiessen's rule in a mobility universality region. Resulting additional mobility for the first time experimentally exhibits a negative temperature coefficient, confirming interface plasmons in a polysilicon depletion region to be dominant remote Coulomb scatterers. We also present corroborative evidence as quoted in the literature, including: 1) calculated temperature-dependent remote Coulomb mobility due to ionized impurity atoms in a polysilicon depletion region; 2) experimentally assessed additional mobility at room temperature; and 3) simulated remote Coulomb mobility due to interface plasmons in a polysilicon depletion region as well as its temperature coefficient. Validity of Matthiessen's rule used in this paper is verified.en_US
dc.language.isoen_USen_US
dc.subjectGate oxideen_US
dc.subjecthigh-ken_US
dc.subjectinterface plasmonsen_US
dc.subjectmetal gateen_US
dc.subjectmobilityen_US
dc.subjectmetal-oxide-semiconductor field-effect transistors (MOSFETs)en_US
dc.subjectphononsen_US
dc.subjectpolysiliconen_US
dc.subjectremote Coulomben_US
dc.subjectscatteringen_US
dc.subjectsurface roughnessen_US
dc.titleTemperature-Dependent Remote-Coulomb-Limited Electron Mobility in n(+)-Polysilicon Ultrathin Gate Oxide nMOSFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2011.2107519en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume58en_US
dc.citation.issue4en_US
dc.citation.spage1038en_US
dc.citation.epage1044en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000288676200016-
dc.citation.woscount5-
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