標題: Temperature-Dependent Remote-Coulomb-Limited Electron Mobility in n(+)-Polysilicon Ultrathin Gate Oxide nMOSFETs
作者: Chen, Ming-Jer
Chang, Sou-Chi
Kuang, Shin-Jiun
Lee, Chien-Chih
Lee, Wei-Han
Cheng, Kuan-Hao
Zhan, Yi-Hsien
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Gate oxide;high-k;interface plasmons;metal gate;mobility;metal-oxide-semiconductor field-effect transistors (MOSFETs);phonons;polysilicon;remote Coulomb;scattering;surface roughness
公開日期: 1-四月-2011
摘要: Additional electron mobility due to remote scatterers in n(+)-polysilicon 1.65-nm gate oxide (SiO(2)) n-channel metal-oxide-semiconductor field-effect transistors is experimentally extracted at three different temperatures (i.e., 233, 263, and 298 K). The core of the extraction process consists of simulated temperature-dependent universal mobility curves and Matthiessen's rule in a mobility universality region. Resulting additional mobility for the first time experimentally exhibits a negative temperature coefficient, confirming interface plasmons in a polysilicon depletion region to be dominant remote Coulomb scatterers. We also present corroborative evidence as quoted in the literature, including: 1) calculated temperature-dependent remote Coulomb mobility due to ionized impurity atoms in a polysilicon depletion region; 2) experimentally assessed additional mobility at room temperature; and 3) simulated remote Coulomb mobility due to interface plasmons in a polysilicon depletion region as well as its temperature coefficient. Validity of Matthiessen's rule used in this paper is verified.
URI: http://dx.doi.org/10.1109/TED.2011.2107519
http://hdl.handle.net/11536/9061
ISSN: 0018-9383
DOI: 10.1109/TED.2011.2107519
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 58
Issue: 4
起始頁: 1038
結束頁: 1044
顯示於類別:期刊論文


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