標題: Nanosized-Metal-Grain-Induced Characteristic Fluctuation in 16 nm Complementary Metal-Oxide-Semiconductor Devices and Digital Circuits
作者: Li, Yiming
Cheng, Hui-Wen
傳播研究所
電機工程學系
Institute of Communication Studies
Department of Electrical and Computer Engineering
公開日期: 1-四月-2011
摘要: In this work, we investigate the effect of random work functions (WKs) resulting from the nanosized grains of a metal gate on 16 nm metal-oxide-semiconductor field-effect transistor (MOSFET) devices and circuits. The random number and position of nanosized metal grains induce rather different random WKs on a MOSFET gate, which cannot be modeled using an averaged WK; thus, we consider each WK of the metal gate, according to the size of partitioned grains, in three-dimensional device simulation. The results of this study indicate that the random-WK-induced threshold voltage fluctuation of N- and P-MOSFETs are about 1.5 and 1.6 times higher than the results calculated by the recently reported averaged WK fluctuation method. This is because even if the devices have similar threshold voltages, they may exhibit quite different combinations of WKs owing to the random position of nanosized metal grains on the devices' gate. Coupled device-circuit simulation is further adopted to explore the timing fluctuations of complementary metal-oxide-semiconductor (CMOS) inverter circuits. The random position of nanosized metal grains results in 10 and 12% variations in the timing fluctuation and power consumption of the CMOS inverter circuit. (C) 2011 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.50.04DC22
http://hdl.handle.net/11536/9043
ISSN: 0021-4922
DOI: 10.1143/JJAP.50.04DC22
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 50
Issue: 4
結束頁: 
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