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dc.contributor.authorChen, Hou-Yuen_US
dc.contributor.authorLin, Chia-Yien_US
dc.contributor.authorChen, Min-Chengen_US
dc.contributor.authorHuang, Chien-Chaoen_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.date.accessioned2014-12-08T15:11:47Z-
dc.date.available2014-12-08T15:11:47Z-
dc.date.issued2011-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.50.04DL05en_US
dc.identifier.urihttp://hdl.handle.net/11536/9037-
dc.description.abstractHigh-sensitivity polycrystalline silicon (poly-Si) nanowire field-effect transistor (NW FET) pH sensors using top-down and self-aligned fabrication approaches involving the conventional complementary metal-oxide-semiconductor (CMOS) process are reported. For the top-down NW FET, the shrinkage due to reoxidation enables the nanowire width to be scaled to 40 nm without requiring the use of extra lithography equipment, and this improves the electrical uniformity and the performance of the sensors. The surface-ionic coupling operation of this buried-channel field-effect sensor exhibits superior pH sensitivity (threshold voltage shift > 100 mV/pH) as compared to the surface-channel ion-sensitive FET (ISFET). In addition, we report a novel method for fabricating self-aligned, vertical-channel, poly-Si nanowire sensors. The resulting 65-nm self-aligned vertical-channel poly-Si device was found to be feasible for independent-gate bias control, thus enabling its possible integration in very-large-scale integration (VLSI) circuits. Both the abovementioned approaches enable the manufacture of nanowire devices on a large-scale integrated (LSI) circuit using only CMOS manufacturing processes; this provides a high sensitivity, compact and cost-efficient biosensor systems-on-a-chip application. (C) 2011 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleFabrication of High-Sensitivity Polycrystalline Silicon Nanowire Field-Effect Transistor pH Sensor Using Conventional Complementary Metal-Oxide-Semiconductor Technologyen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.50.04DL05en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume50en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000289722400155-
dc.citation.woscount4-
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