標題: A simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography
作者: Lai, YL
Chang, EY
Chang, CY
Yang, HPD
Nakamura, K
Shy, SL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: T-shaped gate;electron beam lithography;deep-UV resist;electron-beam resist;tri-layer resist;GaAs process
公開日期: 1-十二月-1996
摘要: A new fabrication process of T-shaped gates has been developed using a deep-UV/electron-beam/deep-UV (DUV/EB/DUV) tri-layer resist system and electron-beam lithography for the first time. The simple process accomplished a submicron T-shaped gate by a single exposure and a single development step. The narrow/wide/narrow opening of the DUV/EB/DUV resist structure can be accurately controlled by the e-beam dosage and the development conditions. Differences in the sensitivities of the DUV resist and the EB resist were investigated. Due to the lower sensitivity of the adopted DUV resist to the electron beam, the smaller opening of the DUV resist layer was obtained. The higher sensitivity of the EB resist resulted in a wider opening in the middle resist layer. A 0.15-mu m-gate-length T-shaped gate can be easily formed by the short-process-time and low-production-cost hybrid DUV/EB/DUV resist approach.
URI: http://dx.doi.org/10.1143/JJAP.35.6440
http://hdl.handle.net/11536/903
ISSN: 0021-4922
DOI: 10.1143/JJAP.35.6440
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 35
Issue: 12B
起始頁: 6440
結束頁: 6446
顯示於類別:會議論文


文件中的檔案:

  1. A1996WF48000019.pdf