標題: Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement
作者: Zan, Hsiao-Wen
Chen, Wei-Tsung
Yeh, Chung-Cheng
Hsueh, Hsiu-Wen
Tsai, Chuang-Chuang
Meng, Hsin-Fei
物理研究所
光電工程學系
Institute of Physics
Department of Photonics
公開日期: 11-Apr-2011
摘要: In this study, we propose a floating dual gate (FDG) indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) with a floating metal back gate that is directly contact with IGZO without a dielectric layer. The floating back gate effect is investigated by changing the work function (phi) of the back gate. The FDG IGZO TFT exhibits an improved field-effect mobility (mu), unchanged subthreshold swing (SS), high on/off current ratio, and a tunable threshold voltage ranged (V(th)) from -5.0 to + 7.9 V without an additional back gate power supply. (C) 2011 American Institute of Physics. [doi:10.1063/1.3578403]
URI: http://dx.doi.org/10.1063/1.3578403
http://hdl.handle.net/11536/9007
ISSN: 0003-6951
DOI: 10.1063/1.3578403
期刊: APPLIED PHYSICS LETTERS
Volume: 98
Issue: 15
結束頁: 
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