Title: Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors
Authors: Chung, Wan-Fang
Chang, Ting-Chang
Li, Hung-Wei
Chen, Shih-Ching
Chen, Yu-Chun
Tseng, Tseung-Yuen
Tai, Ya-Hsiang
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Issue Date: 11-Apr-2011
Abstract: The environment-dependent electrical performances as a function of temperature for sol-gel derived amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors are investigated in this letter. In the ambients without oxygen, thermal activation dominates and enhances device performance. In oxygen-containing environments, mobility and drain current degrades and the threshold slightly increase as temperature increases. We develop a porous model for a-IGZO film relating to the drain current and mobility lowering due to film porosity and oxygen adsorption/penetration. It also relates to the threshold voltage recovery at high temperature owing to the varying form of adsorbed oxygen and the combination of oxygen and vacancies. (C) 2011 American Institute of Physics. [doi:10.1063/1.3580614]
URI: http://dx.doi.org/10.1063/1.3580614
http://hdl.handle.net/11536/9003
ISSN: 0003-6951
DOI: 10.1063/1.3580614
Journal: APPLIED PHYSICS LETTERS
Volume: 98
Issue: 15
End Page: 
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