標題: GaNAs與GaInNAs的磊晶成長與特性研究
Epitaxial Growth and Characterization Study of GaNAs and GaInNAs
作者: 李威儀
LEE WEI-I
交通大學電子物理系
關鍵字: 氮砷化鎵;氮砷化銦鎵;砷化鎵;有機金屬氣相磊晶法;深能階缺陷;長波長雷射;量子井;GaNAs;GaInNAs;GaAs;Metalorganic chemical vapor deposition (MOCVD);Deep level defect;Long-wavelength laser;Quantum well;Dimethylhydrazine (DMHy);DLT
公開日期: 2000
官方說明文件#: NSC89-2112-M009-011
URI: http://hdl.handle.net/11536/90008
https://www.grb.gov.tw/search/planDetail?id=523567&docId=95079
Appears in Collections:Research Plans