標題: 開發具備新型堆疊式閘極氧化層與自動對準增高式源/汲極結構之高效能低溫複晶矽薄膜電晶體(II)
The Investigation and Fabrication of High Performance Poly-Si TFT with A Novel Stacked Gate Dielectric and Self-Aligned Raised Source/Drain Structure(II)
作者: 張國明
CHANG KOW-MING
交通大學電子工程系
公開日期: 2005
官方說明文件#: NSC94-2215-E009-012
URI: http://hdl.handle.net/11536/89966
https://www.grb.gov.tw/search/planDetail?id=1143861&docId=219371
Appears in Collections:Research Plans