標題: High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate
作者: Tang, Shih-Hsuan
Chang, Edward Yi
Hudait, Mantu
Maa, Jer-Shen
Liu, Chee-Wee
Luo, Guang-Li
Trinh, Hai-Dang
Su, Yung-Hsuan
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 18-Apr-2011
摘要: High-quality epitaxial Ge films were grown on GaAs substrates by ultrahigh vacuum chemical vapor deposition. High crystallinity and smooth surface were observed for these films by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Direct band gap emission (1550 nm) from this structure was detected by photoluminescence. Valence band offset of 0.16 eV at the Ge/GaAs interface was measured by x-ray photoelectron spectroscopy. N-type arsenic self-doping of 10(18)/cm(-3) in the grown Ge layers was determined using electrochemical capacitance voltage measurement. This structure can be used to fabricate p-channel metal-oxide-semiconductor field-effect transistor for the integration of Ge p-channel device with GaAs n-channel electronic device. (C) 2011 American Institute of Physics. [doi:10.1063/1.3580605]
URI: http://dx.doi.org/10.1063/1.3580605
http://hdl.handle.net/11536/8992
ISSN: 0003-6951
DOI: 10.1063/1.3580605
期刊: APPLIED PHYSICS LETTERS
Volume: 98
Issue: 16
結束頁: 
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