標題: Effect of growth temperature on a-plane ZnO formation on r-plane sapphire
作者: Peng, Chun-Yen
Tian, Jr-Sheng
Wang, Wei-Lin
Ho, Yen-Teng
Chuang, Shu-Chang
Chu, Ying-Hao
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-May-2011
摘要: The effect of growth temperature on a-plane ZnO formation on r-plane sapphire has been systematically investigated by employing in situ high pressure reflection high-energy electron diffraction, atomic force microscopy, and high-resolution x-ray diffraction. For film growth above and below 600 degrees C, it is shown that there is a significant difference in growth rate and surface morphology due to the differences in the growth mode. Stripelike morphologies were observed on the surface of a-plane ZnO grown at low temperature (LT) because of differences in the growth rate along the c-axis and the growth rate normal to the c-axis. Furthermore, annealing of films grown at low temperature results in more pronounced stripe morphology and in improvement of crystallinity. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3549141]
URI: http://dx.doi.org/10.1116/1.3549141
http://hdl.handle.net/11536/8960
ISSN: 0734-2101
DOI: 10.1116/1.3549141
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume: 29
Issue: 3
結束頁: 
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