標題: 深次微米MOSFET穿隧漏電流、鎖定及靜電放電之研究(II)
Tunneling Leakage, Latch-up, and ESD in Deep Submicron MOSFET's (II)
作者: 陳明哲
CHEN MING-JER
交通大學電子工程研究所
關鍵字: 穿隧漏電流;快閃式記憶體;深次微米;靜電放電;鎖定;超大型積體電路;Tunneling leakage;Flash memory;Deep submicrometer;ESD;Latch-up;VLSI
公開日期: 2000
官方說明文件#: NSC89-2215-E009-049
URI: http://hdl.handle.net/11536/89508
https://www.grb.gov.tw/search/planDetail?id=542092&docId=99579
Appears in Collections:Research Plans


Files in This Item:

  1. 892215E009049.pdf