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dc.contributor.authorTsai, Min-Anen_US
dc.contributor.authorWang, Hsun-Wenen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLin, Shiuan-Hueien_US
dc.date.accessioned2014-12-08T15:11:37Z-
dc.date.available2014-12-08T15:11:37Z-
dc.date.issued2011-05-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.50.052102en_US
dc.identifier.urihttp://hdl.handle.net/11536/8917-
dc.description.abstractThe enhanced light extraction and reduced forward voltage of a GaN-based vertical injection light emitting diode (VI-LED) with an indium-tin-oxide (ITO) nanorod array were demonstrated. The ITO nanorod array was fabricated by the glancing-angle deposition method. The employment of ITO nanostructures amplified not only the broadband transmission but also the current spreading. The optical output power of GaN-based VI-LEDs with ITO nanorods was enhanced by 50% compared with a conventional VI-LED at an injection current of 350 mA. The extraction efficiency was dramatically raised from 62 to 93% by the surface ITO nanorods. We also optimized the extraction efficiency of the GaN-based VI-LED with an ITO nanorod array by tuning the thickness of the n-GaN top layer via three-dimensional finite difference time domain (3D-FDTD) simulation. (C) 2011 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleHigh Extraction Efficiency of GaN-Based Vertical-Injection Light-Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorod by Glancing-Angle Depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.50.052102en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume50en_US
dc.citation.issue5en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000290786400019-
dc.citation.woscount2-
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