標題: High Extraction Efficiency of GaN-Based Vertical-Injection Light-Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorod by Glancing-Angle Deposition
作者: Tsai, Min-An
Wang, Hsun-Wen
Yu, Peichen
Kuo, Hao-Chung
Lin, Shiuan-Huei
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
公開日期: 1-五月-2011
摘要: The enhanced light extraction and reduced forward voltage of a GaN-based vertical injection light emitting diode (VI-LED) with an indium-tin-oxide (ITO) nanorod array were demonstrated. The ITO nanorod array was fabricated by the glancing-angle deposition method. The employment of ITO nanostructures amplified not only the broadband transmission but also the current spreading. The optical output power of GaN-based VI-LEDs with ITO nanorods was enhanced by 50% compared with a conventional VI-LED at an injection current of 350 mA. The extraction efficiency was dramatically raised from 62 to 93% by the surface ITO nanorods. We also optimized the extraction efficiency of the GaN-based VI-LED with an ITO nanorod array by tuning the thickness of the n-GaN top layer via three-dimensional finite difference time domain (3D-FDTD) simulation. (C) 2011 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.50.052102
http://hdl.handle.net/11536/8917
ISSN: 0021-4922
DOI: 10.1143/JJAP.50.052102
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 50
Issue: 5
結束頁: 
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