標題: Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
作者: Zhang, Xingui
Guo, Huaxin
Lin, Hau-Yu
Cheng, Chao-Ching
Ko, Chih-Hsin
Wann, Clement H.
Luo, Guang-Li
Chang, Chun-Yen
Chien, Chao-Hsin
Han, Zong-You
Huang, Shih-Chiang
Chin, Hock-Chun
Gong, Xiao
Koh, Shao-Ming
Lim, Phyllis Shi Ya
Yeo, Yee-Chia
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-May-2011
摘要: The demonstration of a salicidelike self-aligned contact technology for III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. A thin and continuous crystalline germanium-silicon (GeSi) layer was selectively formed on n(+) doped gallium arsenide (GaAs) regions by epitaxy. A new self-aligned nickel germanosilicide (NiGeSi) Ohmic contact with good morphology was achieved using a two-step annealing process with precise conversion of the GeSi layer into NiGeSi. NiGeSi contact with the contact resistivity (rho(c)) of 1.57 Omega mm and sheet resistance (R(sh)) of 2.8 Omega/square was achieved. The NiGeSi-based self-aligned contact technology is promising for future integration in high performance III-V MOSFETs. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3592211]
URI: http://dx.doi.org/10.1116/1.3592211
http://hdl.handle.net/11536/8897
ISSN: 1071-1023
DOI: 10.1116/1.3592211
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 29
Issue: 3
結束頁: 
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