標題: 寬能隙半導體材料及其結構之時域解析光譜之研究
The Studies on Wide Band-Gap Semiconductors and Their Structures by Time Resolved Photoluminescence
作者: 陳文雄
交通大學電子物理系
關鍵字: 時域解析之冷激光光譜;氮化鎵;硫化鋅;量子井;量子點結構;載子輻射;非輻射復合;Time resolved photoluminescence;InGaN/GaN;ZnS;Quantum well;Quantum dot;Recombination of electron and hole;Radiative/nonradiative recombination;Carrier life time
公開日期: 2000
官方說明文件#: NSC89-2112-M009-013
URI: http://hdl.handle.net/11536/88933
https://www.grb.gov.tw/search/planDetail?id=523807&docId=95142
Appears in Collections:Research Plans


Files in This Item:

  1. 892112M009013.pdf