標題: Fabrication of whitely luminescent silicon-rich nitride films by atmospheric pressure chemical vapor deposition
作者: Lin, Chia-Hung
Uen, Wu-Yih
Huang, Yen-Chin
Li, Zhen-Yu
Liao, Sen-Mao
Yang, Tsun-Neng
Lan, Shan-Ming
Huang, Yu-Hsiang
光電工程學系
Department of Photonics
關鍵字: SiN(x) films;AP-HCVD;Si-QDs;HRTEM
公開日期: 1-Jun-2008
摘要: Silicon-rich nitride (SRN) films that can exhibit an intense white-light emission were fabricated by atmospheric pressure chemical vapor deposition. SRN films were deposited on Si substrates using gaseous SiH(2)Cl(2) (DCS) and NH(3) as the source materials for Si and N, respectively. The deposition temperature was kept at 850 degrees C, and H(2) was used as the carrier gas with its flow rate modulated to maintain chamber pressure at 1 atm during the deposition. The optical properties of films obtained at various deposition times from 15 to 60 min were examined by photoluminescence (PL) measurement. An intense luminescence band (1.5-3.5 eV) was observed by the naked eye for all as-deposited samples. Besides, time-resolved PL exhibited a short radiative lifetime of about 1 ns for SRN films. Moreover, high resolution plan-view transmission electron microscopy demonstrated the existence of Si dots in SRN films with the dot sizes ranging from 2 to 6 nm and a dot density of about 4 x 10(12)/cm(2). On the basis of the results obtained, we considered that the related luminescence mechanism for SRN films is connected to crystalline Si dots produced therein.
URI: http://dx.doi.org/10.1143/JJAP.47.4696
http://hdl.handle.net/11536/8793
ISSN: 0021-4922
DOI: 10.1143/JJAP.47.4696
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 47
Issue: 6
起始頁: 4696
結束頁: 4699
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