標題: Passivation effect of poly-Si thin-film transistors with fluorine-ion-implanted spacers
作者: Chen, Wei-Ren
Chang, Ting-Chang
Liu, Po-Tsun
Wu, Chen Jung
Tu, Chun-Hao
Sze, S. M.
Chang, Chun-Yen
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: fluorine passivation;ion implantation;polycrystalline silicon (poly-Si);spacer;thin-film transistor (TFT)
公開日期: 1-Jun-2008
摘要: In this letter, polycrystalline silicon thin-film transistors (TFTs) consisting of lightly doped drain structure and fluorine-ion-implanted spacers were investigated for the passivation effect under the hot carrier stress. The dose and distribution of fluorine are exhibited by secondary ion mass spectrometry analysis. We could use this method to provide enough fluorine atoms to passivate the defects between the N- regime and the conduction channel. Moreover, the TFTs with fluorine-ion-implanted spacers have better electrical characteristics than the standard device for resisting the degradation effects of hot carrier, such as smaller degradation of transconductance, current crowding effect, and subthreshold slope.
URI: http://dx.doi.org/10.1109/LED.2008.922550
http://hdl.handle.net/11536/8776
ISSN: 0741-3106
DOI: 10.1109/LED.2008.922550
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 6
起始頁: 603
結束頁: 605
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