標題: High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO2 gate stack structure
作者: Ma, Ming-Wen
Chao, Tien-Sheng
Su, Chun-Jung
Wu, Woei-Cherng
Kao, Kuo-Hsing
Lei, Tan-Fu
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: high-kappa;low-temperature poly-Si thin-film transistor (LTPS-TFT);metal gate;metal-induced lateral crystallization (MILC)
公開日期: 1-Jun-2008
摘要: In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral-crystallization (MILC) channel layer and TaN/HfO2 gate stack is demonstrated for the first time. The devices of low threshold voltage V-TH similar to 0.095 V, excellent subthreshold swing S.S. similar to 83 mV/dec., and high field-effect mobility mu(FE) similar to 240 cm(2)/V center dot s are achieved without any defect passivation methods. These significant improvements are due to the MILC channel film and the very high gate-capacitance density provided by HfO2 gate dielectric with the effective oxide thickness of 5.12 mn.
URI: http://dx.doi.org/10.1109/LED.2008.921208
http://hdl.handle.net/11536/8775
ISSN: 0741-3106
DOI: 10.1109/LED.2008.921208
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 6
起始頁: 592
結束頁: 594
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