標題: Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure
作者: Lin, G
Yen, ST
Lee, CP
Liu, DC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十二月-1996
摘要: We report on a very small vertical far-field angle achieved by lasers with a specially designed structure. For an InGaAs-AlGaAs quantum-well laser with a 2.5-mu m-wide ridge waveguide, the far-field pattern has a vertical far-field angle of 13 degrees and a lateral far-field angle of 8 degrees. Meanwhile, the threshold current remains acceptably low (approximate to 36 mA for a 500-mu m-long cavity), The slope efficiency of the L-I characteristic is high (>0.9 W/A) compared to that of the conventional laser.
URI: http://dx.doi.org/10.1109/68.544686
http://hdl.handle.net/11536/877
ISSN: 1041-1135
DOI: 10.1109/68.544686
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 8
Issue: 12
起始頁: 1588
結束頁: 1590
顯示於類別:期刊論文


文件中的檔案:

  1. A1996VV26000002.pdf