標題: Novel Cu/Cr/Ge/Pd ohmic contacts on highly doped n-GaAs
作者: Sahoo, Kartika Chandra
Chang, Chun-Wei
Wong, Yuen-Yee
Hsieh, Tung-Ling
Chang, Edward Yi
Lee, Ching-Ting
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: thermal stability;annealing;ohmic contact;diffusion
公開日期: 1-Jun-2008
摘要: The thermal stability of the Cu/Cr/Ge/Pd/n(+)-GaAs contact structure was evaluated. In this structure, a thin 40 nm layer of chromium was deposited as a diffusion barrier to block copper diffusion into GaAs. After thermal annealing at 350 degrees C, the specific contact resistance of the copper-based ohmic contact Cu/Cr/Ge/Pd was measured to be (5.1 +/- 0.6) x 10(-7) Omega cm(2). Diffusion behaviors of these films at different annealing temperatures were characterized by metal sheet resistance, X-ray diffraction data, Auger electron spectroscopy, and transmission electron microscopy. The Cu/Cr/Ge/Pd contact structure was very stable after 350 degrees C annealing. However, after 400 degrees C annealing, the reaction of copper with the underlying layers started to occur and formed Cu3Ga, Cu3As, Cu9Ga4, and Ge3Cu phases due to interfacial instability and copper diffusion.
URI: http://dx.doi.org/10.1007/s11664-008-0398-3
http://hdl.handle.net/11536/8769
ISSN: 0361-5235
DOI: 10.1007/s11664-008-0398-3
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 37
Issue: 6
起始頁: 901
結束頁: 904
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