標題: Characterizing fluorine-ion implant effects on poly-Si thin-film transistors with Pr2O3 gate dielectric
作者: Chang, Chia-Wen
Deng, Chih-Kang
Wu, Shih-Chieh
Huang, Jiun-Jia
Chang, Hong-Ren
Lei, Tan-Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: fluorine-ion implantation;high-k gate dielectric;Praseodymium oxide (Pr2O3);thin-film transistors (TFTs)
公開日期: 1-六月-2008
摘要: The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) with high-k. Pr2O3 as gate dielectric is investigated for the first time. Using the Pr2O3 gate dielectric can obtain a high gate capacitance density and thin equivalent-oxide thickness, exhibiting a greatly enhancement in the driving capability of TFT device. Introducing fluorine ions into the poly-Si film by fluorine ion implantation technique can effectively passivate the trap states in the poly-Si film and at the Pr2O3/poly-Si interface to improve the device electrical properties. The Pr2O3 TFTs fabricated on fluorine-implanted poly-Si film exhibit significantly improved electrical performances, including lower threshold voltage, steeper subthreshold swing, higher field-effect mobility, lower off-state leakage current, and higher on/off current ratio, as compared with the control poly-Si Pr2O3 TFTs. Also, the incorporation of fluorine ions also improves the reliability of poly-Si Pr2O3 TFTs against hot-carrier stressing, which is attributed to the formation of stronger Si-F bonds. Furthermore, superior threshold-voltage rolloff characteristic is also demonstrated in the fluorine-implanted poly-Si Pr2O3 TFTs. Therefore, the proposed scheme is a promising technology for high-performance and high-reliability solid-phase crystallized poly-Si TFT.
URI: http://dx.doi.org/10.1109/JDT.2007.916020
http://hdl.handle.net/11536/8768
ISSN: 1551-319X
DOI: 10.1109/JDT.2007.916020
期刊: JOURNAL OF DISPLAY TECHNOLOGY
Volume: 4
Issue: 2
起始頁: 173
結束頁: 179
顯示於類別:期刊論文


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