標題: Discrete dopant fluctuations in 20-nm/15-nm-gate planar CMOS
作者: Li, Yiming
Yu, Shao-Ming
Hwang, Jiunn-Ren
Yang, Fu-Liang
資訊工程學系
電信工程研究所
Department of Computer Science
Institute of Communications Engineering
關鍵字: complementary metal-oxide-semiconductor (CMOS) device;dopant concentration variation;dopant position fluctuation;random dopant distribution (RDD);threshold voltage fluctuation;3-D modeling and simulation
公開日期: 1-六月-2008
摘要: We experimentally quantified, for the first time, the random dopant distribution (RDD)-induced threshold voltage (V-t) standard deviation up to 40 mV for 20-nm-gate planar complementary metal-oxide-semiconductor (CMOS) field-effect transistors. Discrete dopants have been statistically positioned in the 3-D channel region to examine the associated carrier transportation characteristics, concurrently capturing "dopant concentration variation" and "dopant position fluctuation." As the gate length further scales down to 15 nm, the newly developed discrete dopant scheme features an effective solution to suppress the 3-sigma-edge single-digit dopant-induced V-t variation by the gate work function modulation. The results of this paper may postpone the scaling limit projected for planar CMOS.
URI: http://dx.doi.org/10.1109/TED.2008.921991
http://hdl.handle.net/11536/8754
ISSN: 0018-9383
DOI: 10.1109/TED.2008.921991
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 55
Issue: 6
起始頁: 1449
結束頁: 1455
顯示於類別:期刊論文


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  1. 000256155600023.pdf